Fabrication of abrupt ultra-shallow junctions

ABSTRACT

One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.

This is a division of application Ser. No. 10/020,813, filed Dec. 12,2001, the entire disclosure of which is hereby incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates generally to semiconductor devicemanufacturing and more particularly to methods of manufacturing deviceswith ultra-shallow junctions.

BACKGROUND OF THE INVENTION

In the semiconductor industry, there is a continuing trend toward highdevice densities. To achieve these high device densities, small featureson semiconductor wafers are required. These features include sourceregions, drain regions, and channel regions that relate to devices, suchas field effect transistors (FETs).

In the process of scaling down complementary metal oxide semiconductor(CMOS) devices, which are a type of FET, a vertical dimension must bereduced at the same time as horizontal dimensions are reduced. Inparticular, source and drain regions, or at least source drain extensionregions adjacent the channel, must be made extremely shallow, with acorresponding increase in doping, in order to avoid short channeleffects. For example, the source/drain extension regions adjacent thechannel of a 0.1 μm CMOS device must be no more than about 50 nm thickand have a dopant concentration of about 5×10¹⁹ atom/cm³ or greater.

The formation of ultra-shallow junctions, that is, junctions havingsource/drain regions no more than about 50 nm thick, is considered oneof the significant challenges in manufacturing the next generation ofCMOS devices. The usual approach to forming source/drain regions is ionimplantation. A recognized shortcoming of ion implantation is that itproduces interstitial atoms that can greatly enhance (10 to 1000 times)the diffusivity of dopants. Enhanced diffusivity causes undesirablespreading of the dopants during thermal annealing that is carried out torepair the crystal structure of the substrate after doping.

Fluorine co-implants have been tried as an approach to reducing theenhanced diffusivity caused by ion implantation used to incorporate thedopant atoms. This has been found to be partially successful inmitigating the enhancement caused by ion implantation Highertemperatures raise the diffusivity and offset the benefit of theco-implants. Thus, there remains an unsatisfied need for effectivemethods of forming ultra-shallow junctions.

SUMMARY OF THE INVENTION

The following presents a simplified summary in order to provide a basicunderstanding of some aspects of the invention. This summary is not anextensive overview of the invention. It is intended neither to identifykey or critical elements of the invention nor to delineate the scope ofthe invention. Rather, the primary purpose of the summary is to presentsome concepts of the invention in a simplified form as a prelude to themore detailed description that is presented later.

One aspect of the invention relates to a method of forming P-N junctionswithin a semiconductor substrate. The method involves providing atemporary impurity atom, such as fluorine, within the semiconductorsubstrate crystal matrix prior to in-diffusion of a primary dopant, suchas boron. The impurity atom is a faster diffusing species relative tosilicon atoms. During in-diffusion, the second dopant acts to reduce thedepth to which the dopant diffuses and thereby facilitates the formationof very shallow junctions.

Another aspect of the invention relates to a method of doping a singlecrystal semiconductor substrate. The method involves pre-amorphizing alayer of the crystal adjacent the surface, implanting the substrate witha temporary dopant, and heating the substrate to cause the crystal tore-grow within the layer adjacent the surface. The temporary dopantbecomes incorporated within the crystal matrix of the re-grown layer.In-diffusion is then carried out by forming a coating comprising atarget dopant over the surface of the substrate and annealing to causethe target dopant to diffuse from the coating into the substrate. Veryshallow junctions can thereby be formed.

To the accomplishment of the foregoing and related ends, the followingdescription and annexed drawings set forth in detail certainillustrative aspects and implementations of the invention. These areindicative of but a few of the various ways in which the principles ofthe invention may be employed. Other aspects, advantages and novelfeatures of the invention will become apparent from the followingdetailed description of the invention when considered in conjunctionwith the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of a process of the invention.

FIG. 2 is a flow chart of a process according to one aspect of thepresent invention.

FIG. 3 is a flow chart of a process according to another aspect of thepresent invention.

FIG. 4 is a schematic illustration of a substrate in which field oxideislands have been created.

FIG. 5 is a schematic illustration showing a cross-section of thesubstrate of FIG. 4 along the line A-A′ after forming a gate layer and apoly layer.

FIG. 6 is a schematic illustration showing the cross-section of FIG. 5after forming a resist coating and patterning.

FIG. 7 is a schematic illustration showing the cross-section of FIG. 6after pre-amorphizing a layer of the substrate.

FIG. 8 is a schematic illustration showing the cross-section of FIG. 7after implanting a temporary dopant.

FIG. 9 is a schematic illustration showing the cross-section of FIG. 8after solid phase epitaxial growth.

FIG. 10 is a schematic illustration showing the cross-section of FIG. 9after depositing a solid source.

FIG. 11 is a schematic illustration showing the cross-section of FIG. 10after depositing a spacer material.

FIG. 12 is a schematic illustration showing the cross-section of FIG. 11after etching the spacer material and the solid source.

FIG. 13 is a schematic illustration showing the cross-section of FIG. 12after implanting source/drain regions.

FIG. 14 is a schematic illustration showing the cross-section of FIG. 14after annealing.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described with reference to theattached drawings, wherein like reference numerals are used to refer tolike elements throughout. FIG. 1 illustrates a process of the presentinvention. Substrate 110 comprises a single crystal of semiconductoratoms 112 in which are substituted atoms 114 of what can be referred toas a temporary dopant. Solid source 120, which comprises target dopantatoms 122, is provided as a coating over the substrate 110. During theprocess of the invention, the substrate 110 and the solid source 120 areheated. Heating causes a portion of the target dopant atoms 122 to enterthe substrate 110, diffuse through the substrate 110, and becomesubstituted in the crystal matrix of the substrate 110. Heating alsocauses a portion of the temporary dopant atoms 114 to react withinterstitials within the substrate 110 and form interstitial species116, which diffuse out of the substrate 110. The temporary dopant atoms114 function to remove interstitials from the crystal matrix duringin-diffusion of the target dopant atoms 122 and thereby substantiallyreduce the depth to which the target dopant atoms 122 penetrate duringthe in-diffusion process.

FIG. 2 is a flow chart of an exemplary process 200, according to oneaspect of the present invention, for forming a P-N junction within asemiconductor substrate. Process 200 is illustrated and described as aseries of acts or events, including pre-amorphization 201, implanting atemporary dopant 203, re-growing the crystal by solid phase epitaxialgrowth (SPE) 205, depositing a dopant-containing solid source 207, andannealing 209. The present invention is not limited by the illustratedordering of such acts or events, as some acts may occur in differentorders and/or concurrently with other acts or events. In addition, notall illustrated acts or events are required to implement a methodologyin accordance with the present invention.

The semiconductor substrate includes a semiconductor crystal, typicallysilicon. Other examples of semiconductors include GaAs and InP. Inaddition to a semiconductor crystal, the substrate may include variouselements therein and/or layers thereon. These can include metal layers,barrier layers, dielectric layers, device structures, active elementsand passive elements including word lines, source regions, drainregions, bit lines, bases, emitters, collectors, conductive lines,conductive vias, etc.

Act 201 is pre-amorphizing a layer of the semiconductor crystal adjacenta surface of the substrate. Subsequently, a temporary dopant implant,Act 203, takes place. Pre-amorphization can be carried out by anysuitable means, but generally involves bombarding the surface with ions.Almost any type of ion can be used for pre-amorphization, including, forexample, ions of Ge, Sb, In, Si, Ar, or F.

The thickness of the pre-amorphized layer is generally selected to be atleast co-extensive with the thickness of the layer in which temporarydopant is desired, which is in turn selected to be at least about thethickness of the layer in which the target dopant is desired. Typicalthicknesses for the pre-amorphized layer are in the range from about 10to about 100 nm. Pre-amorphization can generally be achieved bybombarding with about 1×10¹³ to about 1×10¹⁵ atoms/cm² at an energy fromabout 5 to about 100 keV. For example, a pre-amorphized layer from about15 to about 20 nm thick in silicon can be produced using about 1×10¹⁴ toabout 2×10¹⁴ atoms/cm² Ge at an energy of about 15 keV, or alternativelywith about 4×10¹³ to about 5×10¹³ atoms/cm² In or Sb at an energy ofabout 25 keV.

Act 203 is implanting a temporary dopant within the pre-amorphizedlayer. The temporary dopant or impurity atom can include any suitablespecies that forms an interstitial species having a higher diffusivitywithin the semiconductor crystal than interstitials of the semiconductoritself. Examples of suitable temporary dopants include fluorine andcarbon. In one embodiment, the temporary dopant is implanted with a dosein the range from about 1×10¹³ to about 1×10¹⁸ atoms/cm². In anotherembodiment, the temporary dopant is implanted with a dose in the rangefrom about 1×10¹⁴ to about 1×10¹⁷ atoms/cm². In a further embodiment,the temporary dopant is implanted with a dose in the range from about5×10¹⁴ to about 1×10¹⁶ atoms/cm². As a specific example, fluorine can beimplanted with a dose from about 1×10¹⁵ to about 2×10¹⁵ atoms/cm².

The depth of penetration of the temporary dopant can be controlledthrough the energy level imparted to the ions used to form the implant.The energy is selected so that the temporary dopant is substantiallylimited to the pre-amorphized layer. For example, a fluorine implant canbe carried out at an energy of about 2 to about 3 keV. Diffusion tendsto cause the temporary dopant to become evenly dispersed within thepre-amorphized layer.

Act 205 is re-growing the semiconductor crystal within thepre-amorphized layer whereby the temporary dopant becomes incorporatedinto the crystal matrix. The crystal generally re-grows from the intactportion beneath the pre-amorphized layer. Mild heating, such as in thetemperature range from about 500° C. to about 600° C. for about 10minutes to about an hour, generally brings about crystal re-growth. Forexample, a silicon crystal can generally be re-grown by maintaining itat a temperature of about 600° C. for about half an hour.

Act 207 is forming over the substrate surface a layer of solid materialthat contains the target dopant. Generally, the layer of solid materialis formed by chemical vapor deposition (CVD). Pre-cleaning of thesubstrate surface is commonly employed to improve the reproducibility ofthe process. The solid material includes a suitable concentration of thetarget dopant and generally a carrier material. Suitable carriermaterials include, for example, silicate glasses. Preferably, theinterstitial species of the temporary dopant has a high solubility inthe solid material or reacts with the solid material during theannealing 209 and thereby acts as a sink for interstitial species of thetemporary dopant.

Any suitable concentration of the target dopant in the carrier materialcan be used, but it is preferred that the concentration is such that atan equilibrium between the solid material and the semiconductor crystal,the target dopant concentration within the semiconductor crystal is nearsaturation. In such manner, increasing the concentration of the targetdopant within the solid material does little to increase theconcentration of the target dopant within the semiconductor crystal. Inone embodiment, the concentration of the target dopant within the solidmaterial is such that an equilibrium concentration within thesemiconductor crystal is at least about 50% of saturation. In anotherembodiment, the concentration provides an equilibrium value of at leastabout 75% of saturation. In a further embodiment, the concentrationprovides an equilibrium value of at least about 90% of saturation.

The target dopant can be any of the dopants used to change theconductivity type of a semiconductor substrate. An example of a suitabletarget dopant is boron. Another example of a suitable target dopant isphosphorus. Prior to applying a process of the invention, the substrateis typically given a blanket implant of a dopant having a conductivitytype opposite that of the target dopant, whereby P-N junctions form atthe borders of the regions implanted according to the present invention.

Act 209 is annealing, which in this context means heating briefly to ahigh temperature. Heating causes the target dopant to diffuse into thesemiconductor crystal and to become incorporated into its matrix. Duringannealing 209, a portion of the temporary dopant forms interstitialspecies that diffuse out of the semiconductor crystal. Annealing 209also repairs defects in the semiconductor crystal.

Annealing 209 is rapid and may be referred to as rapid thermalannealing. The peak annealing temperature is typically from about 950°C. to about 1100° C. and is maintained very briefly, generally asbriefly as equipment permits. For example, annealing may involve heatingto a temperature of 1050° C. for about 0.5 seconds. As annealing timesare made shorter, higher temperatures can be employed.

After annealing 209, the target dopant is diffused into thesemiconductor crystal and affects the conductivity type of the crystalwithin a thin layer near the surface. Preferably, the target dopantaffects the conductivity type within a layer that is about 50 nm orless, more preferably about 30 nm or less, and still more preferablyabout 10 nm or less. In one embodiment, the concentration of the targetdopant within the thin layer reaches at least about 1×10¹⁹ atom/cm³. Inanother embodiment, the concentration of the target dopant reaches atleast about 1×10²⁰ atom/cm³. In a further embodiment, the concentrationof the target dopant reaches at least about 5×10²⁰ atom/cm³.

As discussed above, the annealing causes a portion of the target atoms(e.g., boron dopant) in the carrier material to enter the substrate.Concurrently, the temporary dopant in the substrate react with theinterstitials within the substrate to form interstitial species whichout-diffuse. Such out-diffusion then reduces an amount or depth in whichthe targets atoms diffuse in the substrate by reducing the number ofinterstitials in the substrate that would otherwise tend to enhancediffusivity. In the above manner, the depth of the target atoms isreduced, thereby resulting advantageously in shallow junctions.

FIG. 3 is a flow chart of an exemplary process 300 for making a CMOSdevice in accordance with another aspect of the present invention. Aswith the process 200, the present invention is not limited by theillustrated ordering of the process 300, as some acts may occur indifferent orders and/or concurrently. In addition, not all illustratedacts or events are required to implement a methodology in accordancewith the present invention.

Act 301 is forming isolation regions on a semiconductor substrate. Thisis illustrated with device 400 in FIG. 4. The device 400 includes asemiconductor substrate 401 and field oxide islands 403. The field oxidecan comprise any suitable insulator, including for example silicondioxide or tetraethyl orthosilicate (TEOS). The field oxide islands 403can be formed by any suitable process, for example LOCOS (localoxidation of silicon) or STI (shallow trench isolation).

Act 303 is providing a threshold implant to the semiconductor of thesubstrate. This implant provides a first conductivity type within alayer of the semiconductor adjacent a surface of the substrate.

Act 305 is providing a gate layer. Generally, gate layers are formedwith silicon dioxide and are referred to as gate oxide layers. However,for very small devices, it is often desirable to use a material that hasa lower electrical resistance than silicon dioxide and can be providedin greater thickness than an equivalent silicon dioxide layer. Suchmaterials are referred to as high-k dielectrics and include silicates,aluminates, titanates, and metal oxides. Examples of silicate high-kdielectrics include silicates of Ta, Al, Ti, Zr, Y, La and Hf, includingZr and Hf doped silicon oxides and silicon oxynitrides. Examples ofaluminates include transition metal aluminates, such as compounds of Zrand Hf. Examples of titanate high-k dielectrics include BaTiO₃, SrTiO₃,and PdZrTiO₃. Examples of metal oxide high-k dielectrics include oxidesof refractory metals, such as Zr and Hf, and oxides of Lanthanide seriesmetals, such as La, Lu, Eu, Pr, Nd, Gd, and Dy. Additional examples ofmetal oxide high-k dielectrics include Al₂O₃, TiO₂, Ta₂O₅, Nb₂O₅ andY₂O₃.

The gate layer is formed by any suitable process including, for example,oxidation, spin coating, or CVD. In one embodiment, the layer is fromabout 1 nm to about 100 nm thick. In another embodiment, the layer isfrom about 3 nm to about 50 nm thick. In a further embodiment, the layeris from about 5 nm to about 30 nm thick.

Act 307 is forming a poly layer over the gate layer. FIG. 5 illustratesa cross-section of the substrate 400, taken along the line A-A′ of FIG.4, after formation of a gate layer 405 and a poly layer 407. A polylayer is one containing either amorphous silicon or polysilicon. In oneembodiment, the poly layer has a thickness of about 40 nm to about 120nm. In another embodiment, the poly layer has a thickness of about 50 nmto about 1000 nm. In a further embodiment, the poly layer has athickness of about 60 nm to about 90 nm.

Act 309 is forming a resist coating over the poly layer. Any suitableresist may be used. The resist is lithographically patterned in act 311and the pattern is transferred by etching the exposed portion of theunderlying poly and gate layers. FIG. 6 illustrates the substrate 400after patterning with the resist coating 409.

The pattern includes gaps that have any suitable size or shape. In oneembodiment, the pattern includes gaps having widths within the rangefrom about from 0.01 to about 10 μm. In another embodiment, the patternincludes gaps having widths within the range from about from 0.05 toabout 1.0 μm. In a further embodiment, the pattern includes gaps havingwidths within the range from about from 0.1 to about 0.5 μm.

Act 313 is pre-amorphization, which can be carried out without anyadditional masking, giving a structure such as illustrated in FIG. 7. InFIG. 7, the semiconductor 401 is pre-amorphized within the layer 411where it is exposed in gaps patterned within the resist 409, the polylayer 407, and the gate layer 405.

Act 315 is implanting the temporary dopant. This can also be donewithout any additional masking. FIG. 8 illustrates a layer 413 withinsemiconductor 401 that has received the temporary dopant implant. Thelayer 413 is contained within the amorphized layer 411.

Act 317 is stripping the resist. The resist can be stripped at anysuitable point in the process 300 of FIG. 3.

Act 319 is solid phase epitaxial growth, wherein the crystallinestructure within the amorphized portion of the semiconductor 401 issubstantially repaired while incorporating the temporary dopant. FIG. 9illustrates a resulting layer 415 of the semiconductor 401 in which thetemporary dopant is substituted within the crystal matrix.

Act 321 is deposition of a solid source for the target dopant.Deposition of the solid source generally involves heating the substrate.Thus, Act 321 can, in some instances, be carried out concurrently withAct 319, SPE. FIG. 10 illustrates the device 400 after deposition of thesolid source 417.

Act 323 is depositing a spacer material. Optionally, the spacer materialis the same as the solid source, in which case Acts 321 and 323 can becombined. FIG. 11 illustrates the device 400 after deposition of thespacer material 419.

Act 325 is a spacer etch. The spacer etch 325 generally etches the solidsource as well as the spacer material, whereby the spacer material andthe solid source remain only adjacent the gate stacks, as illustratedfor the device 400 in FIG. 12.

Act 327 is a source/drain implant. The ordering of this step isexemplary, as the source/drain implant can be provided either earlier orlater in the process. FIG. 13 illustrates the device 400 provided withsource/drain regions 421. The spacer material 419 creates a separationbetween the source/drain regions 421 and the gate stacks.

Act 329 is annealing. Annealing causes the target dopant to diffuse inthe semiconductor and form shallow junctions while the temporary dopantout-diffuses. FIG. 14 illustrates substrate 400 after the formation ofshallow junctions 423. In this example, annealing also repairs defectscreated during Act 327, the source/drain implant.

Although the invention has been illustrated and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others skilled in the art upon the reading andunderstanding of this specification and the annexed drawings. Inparticular regard to the various functions performed by the abovedescribed components (assemblies, devices, circuits, systems, etc.), theterms (including a reference to a “means”) used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure which performs thefunction in the herein illustrated exemplary implementations of theinvention. In addition, while a particular feature of the invention mayhave been disclosed with respect to only one of several implementations,such feature may be combined with one or more other features of theother implementations as may be desired and advantageous for any givenor particular application. Furthermore, to the extent that the terms“includes”, “having”, “has”, “with”, or variants thereof are used ineither the detailed description and the claims, such terms are intendedto be inclusive in a manner similar to the term “comprising.”

1. A method of doping a single crystal semiconductor substrate,comprising: exposing a surface of the substrate to high energy particlesto pre-amorphize a layer of the crystal adjacent the surface; andimplanting the substrate with a temporary impurity atom; heating thesubstrate to cause the crystal to re-grow within the layer adjacent thesurface; either before, during, or after heating, forming a coatingcomprising a target dopant over the surface of the substrate; andannealing to cause the target dopant to diffuse from the coating intothe substrate.
 2. The method of claim 1, wherein: the crystal comprisesa semiconductor having an interstitial form; and during annealing, thetemporary impurity atom is a faster diffusing species relative tosilicon.
 3. The method of claim 1, wherein the high energy particlescomprise particles selected from the group consisting of Ge, In, Sb, Si,and Ar.
 4. The method of claim 1, wherein the temporary impurity atomdopant is implanted with a dose of at least about 1×10¹⁴ atoms/cm². 5.The method of claim 1, wherein the temporary impurity atom is fluorine.6. The method of claim 1, wherein after annealing 90% of the targetdopant that diffuses into the substrate is located within about 50 nm ofthe surface.
 7. The method of claim 1, wherein the target dopant isboron.
 8. The method of claim 1, wherein after annealing theconcentration of the target dopant within the substrate adjacent thesurface is at least about 1×10¹⁷⁹ atom/cm³.
 9. The method of claim 1,wherein the coating comprises a silicate glass.